pb rohs compliance rohs compliance mbrf20h100ct ? mbrf20h200ct isolated 20.0 amps. schottky barrier rectifiers ito-220ab features ? plastic material used ca rries underwriters laboratory classifications 94v-0 ? metal silicon junction, ma jority carrier conduction ? low power loss, high efficiency ? high current capability, low forward voltage drop ? high surge capability ? for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ? guardring for overvoltage protection ? high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data ? cases: ito-220ab molded plastic ? terminals: pure tin plat ed, lead free. solderable per mil-std-750, method 2026 ? polarity: as marked ? mounting position: any ? mounting torque: 5 in. - lbs. max ? weight: 0.08 ounce, 2.24 grams maximum ratings and electrical characteristics rating at 25 o c ambient temperature unle ss otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbrf 20h100ct mbrf 20h150ct mbrf 20h200ct units maximum recurrent peak reverse voltage v rrm 100 150 200 v maximum rms voltage v rms 70 105 140 v maximum dc blocking voltage v dc 100 150 200 v maximum average forward rectified current at t c =133 o c i (av) 20 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=133 o c i frm 20 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a maximum instantaneous forward voltage at (note 2) i f = 10a, tc=25 o c i f = 10a, tc=125 o c i f =20a, tc=25 o c i f =20a, tc=125 o c v f 0.85 0.75 0.95 0.85 0.88 0.75 0.97 0.85 v maximum instantaneous reverse current at rated dc blocking voltage @tc=25 o c @ tc=125 o c i r 5.0 2.0 ua ma voltage rate of change, (rated v r ) dv/dt 10,000 v/us rms isolation voltage (t=1.0 second, r.h. Q30%, t a =25 o c) (note 4) (note 5) (note 6) v iso 4500 3500 1500 v typical thermal resistance per leg (note3) r jc 3.5 o c/w operating junction temperature range t j -65 to +175 o c storage temperature range t stg -65 to +175 o c notes: 1. 2.0 us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. thermal resistance from junction to case per leg. 4. clip mounting (on case), where lead does not overlap heatsink with 0.110? offset. 5. clip mounting (on case), where leads do overlap heatsink. 6. screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19?) Q version: c09 typ typ = = mbr f20hxxx ct y ww = specific device code year work week mbrf20hxxx ct yww
tj=25 c f=1.0mhz vsig=50mvp-p 0 ratings and characteristic curves(mbrf20h100ct - mbrf20h200ct) fig.1- forward current derating curve average forward current. (a) 0 50 100 150 0 4 8 12 16 20 case temperature. ( c) o resistive or inductive load fig.2- maximum non-repetitive forward surge current per leg peak forward surge current. (a) 1 10 100 25 50 0 75 125 100 150 number of cycles at 60hz tj=tj max. 8.3ms single half sine wave jedec method fig.3- typical instantaneous forward characteristics per leg instantaneous forward current. (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.30.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) tj=25 c 0 fig.4- typical reverse characteristics per leg instantaneous reverse current. (ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal impedance per leg transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10.0 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance per leg junction capacitance.(pf) 0.1 1.0 10 100 100 1,000 5,000 reverse voltage. (v) pulse width=300 s 1% duty cycle 200 2,000 500 version: c09 0.0001 0.001 0.01 0.1 1 5 25 75 125 175 tj=125 c 0
|
